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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD543/A/B/C DESCRIPTION With TO-220C package Complement to type BD544/A/B/C 8 A continuous collector current 10 A peak Collector current PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL PARAMETER CONDITIONS BD543 BD543A BD543B VCBO Collector-base voltage VCEO HAN INC Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak SEM GE BD543C BD543 BD543A BD543B BD543C Open emitter OND IC TOR UC VALUE 40 60 80 100 40 60 UNIT V Open base 80 100 Open collector 5 8 10 TC=25ae 70 -65~150 -65~150 ae ae V VEBO IC ICM PC Tj Tstg V A A W Collector power dissipation Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD543/A/B/C CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER BD543 Collector-emitter breakdown voltage BD543A IC=30mA ;IB=0 BD543B BD543C VCEsat-1 VCEsat-2 VCEsat-3 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current IC=3A ;IB=0.3A IC=5A ;IB=1A IC=8A ;IB=1.6A IC=5A ; VCE=4V VCE=30V;IB=0 VCE=60V;IB=0 VEB=5V; IC=0 80 100 0.5 0.5 1 1.6 V V V V CONDITIONS MIN 40 60 V TYP. MAX UNIT SYMBOL V(BR)CEO ICEO IEBO hFE-1 hFE-2 hFE-3 Emitter cut-off current DC current gain DC current gain DC current gain BD543/543A BD543B/543C Switching times ton toff HAN INC SEM GE IC=1A ; VCE=4V IC=3A ; VCE=4V IC=5A ; VCE=4V OND IC 60 40 15 TOR UC 1 0.7 mA mA Turn-on time Turn-off time IC=6A; IB1=-IB2=0.6A RL=5| 0.6 1.0 |I |I s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BD543/A/B/C SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.10 mm) 3 |
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